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2N3661
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2N3661

SKU: 2N3661
2N3661 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Datasheet
2N3661 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 5.0
Derate (Amb) (W/°C) 66m
Max. hFE 100
Min hFE 25
Ic Max. (A) 1.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
R(sat) (Û) 2.4
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 275 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 606053
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