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2N3712S
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2N3712S

SKU: 2N3712S
2N3712S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 800m
C(ob) (F) 9.0p
Derate (Amb) (W/°C) 5.3m
hfe 25
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 30m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 9 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 553960
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