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2N3868S
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2N3868S

SKU: 2N3868S
2N3868S Transistor Silicon PNP CASE: TO39 MAKE: Generic
Datasheet
2N3868S Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Microsemi
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.0
Derate (Amb) (W/°C) 5.7m
t(f) Max. (S) 100n
Max. hFE 150
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 1.5
Polarity PNP
Tr Max. (s) 65n
R(sat) (Û) 1.0
Oper. Temp (°C) Max. 200
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 120 pF
Forward Current Transfer Ratio (hFE), MIN 30
SKU 774227
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