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2N4116
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2N4116

SKU: 2N4116
2N4116 Transistor Silicon NPN CASE: TO59 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO59
Manufacturer USA Make
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 37
Max. hFE 300
Min hFE 100
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
R(sat) (Û) 300m
Derate Above 25°C 361m
Trans. Freq (Hz) Min. 70M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 37 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 165 °C
Collector Capacitance (Cc) 120 pF
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 773961
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