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2N4232A
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2N4232A

SKU: 2N4232A
2N4232A Transistor Silicon NPN CASE: TO66 MAKE: Generic
Datasheet
2N4232A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer MOSPEC Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 75
t(f) Max. (S) 200n-
Max. hFE 100
Min hFE 25
Ic Max. (A) 3.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C 430m
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 773835
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