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2N4296
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2N4296

SKU: 2N4296
2N4296 Transistor Silicon NPN CASE: TO66 MAKE: Generic
Datasheet
2N4296 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer New Jersey Semiconductor
Vbr CBO 350
Vbr CEO 250
Max. PD (W) 2.0
Max. hFE 150
Min hFE 50
Ic Max. (A) 1.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 7.0u
Derate Above 25°C 16m
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 773793
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