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2N5096
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2N5096

SKU: 2N5096
2N5096 Transistor Silicon PNP CASE: TO39 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Solid State Devices Inc
Vbr CBO 500
Vbr CEO 450
Max. PD (W) 2.0
Derate (Amb) (W/°C) 2.6m
Max. hFE 200
Min hFE 20
Ic Max. (A) 1.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 500n
Polarity PNP
R(sat) (Û) 120
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 175
@VCE (V) 15
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 450 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 368531
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