The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5112
View detailed images (1)

2N5112

SKU: 2N5112
2N5112 Transistor Silicon PNP CASE: TO59 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO59
Manufacturer Motorola Semiconductor
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 34
Derate (Amb) (W/°C) 229m
Max. hFE 60
Min hFE 15
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 75u
Polarity PNP
R(sat) (Û) 1.8
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 34 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 773333
Back