The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5183
View detailed images (4)

2N5183

SKU: 2N5183
2N5183 Transistor Silicon NPN CASE: TO18 MAKE: Generic
Datasheet
2N5183 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Central Semiconductor
Vbr CBO 18
Vbr CEO 18
Max. PD (W) 500m
Derate (Amb) (W/°C) 3.3m
hfe 70=
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Trans. Freq (Hz) Min. 62M
@VCE (test) (V) 12
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 115120
Back