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2N5250
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2N5250

SKU: 2N5250
2N5250 Transistor Silicon NPN CASE: TO114 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO114
Manufacturer USA Make
Vbr CBO 125
Vbr CEO 100
Max. PD (W) 350
t(f) Max. (S) 500n
Max. hFE 40
Min hFE 10
Ic Max. (A) 90
@Ic (test) (A) 70
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 2000n
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 350 W
Maximum Collector-Base Voltage |Vcb| 125 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 90 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 606122
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