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2N5330
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2N5330

SKU: 2N5330
2N5330 Transistor Silicon NPN CASE: TO61 MAKE: Generic
Datasheet
2N5330 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer New Jersey Semiconductor
Vbr CBO 150
Vbr CEO 90
Max. PD (W) 80
t(f) Max. (S) 1.2u+
Max. hFE 120
Min hFE 40
Ic Max. (A) 30
@Ic (test) (A) 10
Polarity NPN
Tr Max. (s) 350n
R(sat) (Û) 60m
Derate Above 25°C 800m
Trans. Freq (Hz) Min. 80M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 773084
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