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2N5357
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2N5357

SKU: 2N5357
2N5357 Transistor Silicon PNP CASE: TO37-1 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO37-1
Manufacturer Generic
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
t(f) Max. (S) 100n
Max. hFE 100
Min hFE 25
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 25u
Polarity PNP
Tr Max. (s) 100n
R(sat) (Û) 3.0
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 773064
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