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2N5372
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2N5372

SKU: 2N5372
2N5372 Transistor Silicon PNP CASE: X55-1 MAKE: Generic
Datasheet
2N5372 Datasheet
Product specifications
Type Transistor Silicon PNP
Case X55-1
Manufacturer Micro Electronics
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 620m
C(ob) (F) 10p
Derate (Amb) (W/°C) 2.9m
hfe 40
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 368568
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