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2N5415S
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2N5415S

SKU: 2N5415S
2N5415S Transistor Silicon PNP CASE: TO39 MAKE: SGS Thomson
Datasheet
2N5415S Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer SGS Thomson
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 10
Derate (Amb) (W/°C) 56m
Max. hFE 150
Min hFE 30
Ic Max. (A) 1.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 115 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 606132
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