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2N5535
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2N5535

SKU: 2N5535
2N5535 Transistor Silicon NPN CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Generic
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 50
Max. hFE 150
Min hFE 30
Ic Max. (A) 20
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 6.2
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 772908
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