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2N5552
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2N5552

SKU: 2N5552
2N5552 Transistor Silicon NPN CASE: TO31 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO31
Manufacturer Generic
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 15
t(f) Max. (S) 700n+
Max. hFE 250
Min hFE 40
Ic Max. (A) 10
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 200n
Polarity NPN
Tr Max. (s) 100n
Derate Above 25°C 150m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 772860
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