The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5560
View detailed images (1)

2N5560

SKU: 2N5560
2N5560 Transistor Silicon NPN CASE: TO61 MAKE: Siliconix
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Siliconix
Vbr CBO 175
Vbr CEO 120
Max. PD (W) 150
t(f) Max. (S) 2u+
Max. hFE 90
Min hFE 30
Ic Max. (A) 30
@Ic (test) (A) 15
Polarity NPN
Tr Max. (s) 1u
R(sat) (Û) 50m
Derate Above 25°C 1.4
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 175 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 600 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 772851
Back