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2N5587
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2N5587

SKU: 2N5587
2N5587 Transistor Silicon NPN CASE: TO114 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO114
Manufacturer Generic
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 300
Max. hFE 30
Min hFE 10
Ic Max. (A) 80
@Ic (test) (A) 80
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
R(sat) (Û) 25m
Derate Above 25°C 2.0
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 300 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 80 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 772818
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