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2N5666
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2N5666

SKU: 2N5666
2N5666 Transistor Silicon NPN CASE: TO5 MAKE: Motorola Semiconductor
Datasheet
2N5666 Datasheet
Product specifications
Equivalent 2N5666-SMD
Type Transistor Silicon NPN
Case TO5
Manufacturer Motorola Semiconductor
Vbr CBO 250
Vbr CEO 200
Max. PD (W) 15
t(f) Max. (S) 1.5u+
Max. hFE 120
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 250n
Derate Above 25°C 150m
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 120 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 368604
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