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2N5861
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2N5861

SKU: 2N5861
2N5861 Transistor Silicon NPN CASE: TO105 MAKE: Discrete Semiconductor Industries - DSI
Price:
£4.79 Inc. VAT (£3.99 Ex. VAT)
£4.79 Inc. VAT (£3.99 Ex. VAT)
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Datasheet
2N5861 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO105
Manufacturer Discrete Semiconductor Industries - DSI
Vbr CBO 100
Vbr CEO 50
Max. PD (W) 1.0
t(f) Max. (S) 35n
Max. hFE 100
Min hFE 25
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 300n
Polarity NPN
Tr Max. (s) 18n
R(sat) (Û) 1.0
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 313122
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