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2N6060
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2N6060

SKU: 2N6060
2N6060 Transistor Silicon PNP CASE: TO61 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO61
Manufacturer USA Make
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 150
t(f) Max. (S) 2.0u+
Max. hFE 120
Min hFE 25
Ic Max. (A) 50
@Ic (test) (A) 20
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
Tr Max. (s) 1.5u
R(sat) (Û) 50m
Derate Above 25°C 1.5
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 850 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 772448
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