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2N6082
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2N6082

SKU: 2N6082
2N6082 Transistor Silicon NPN CASE: SOT120 MAKE: Generic
Datasheet
2N6082 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT120
Manufacturer New Jersey Semiconductor
Vbr CBO 36
Vbr CEO 18
Max. PD (W) 50
Min hFE 5.0
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 520m
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 130 pF
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 342780
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