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2N6116
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2N6116

SKU: 2N6116
2N6116 Transistor Silicon NPN CASE: X104-1 MAKE: Generic
Datasheet
2N6116 Datasheet
Product specifications
Type Transistor Silicon NPN
Case X104-1
Manufacturer New Jersey Semiconductor
Max. PD (W) 250m
It(stat) Max. (A) 200m
Itrm Max. (A) 1.0
Polarity NPN
@Vs (V) 10
@RG (Û) 1.0M
Igao Max. (A) 5.0n
t(switch) Typ. (S) 40n
V(gkf) Rated Max. 40
V(T) Max. 1.6
Oper. Temp (°C) Min -55
Oper. Temp (°C) Max. 125
@Pulse Width (S) 100u
@ Temp (°C) 25#
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 200 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 368662
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