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2N6312
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2N6312

SKU: 2N6312
2N6312 Transistor Silicon PNP CASE: TO66 MAKE: Generic
Datasheet
2N6312 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer Central Semiconductor
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 75
Derate (Amb) (W/°C) 430m
t(f) Max. (S) 200n-
Max. hFE 100
Min hFE 25
Ic Max. (A) 5.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 800 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 606172
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