The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N632
View detailed images (12)

2N632

SKU: 2N632
2N632 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 30
Vbr CEO 24
Max. PD (W) 167m
Derate (Amb) (W/°C) 2.8m
hfe 100-
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 25u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 85
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.17 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 95 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 772289
Back