The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6331
View detailed images (13)

2N6331

SKU: 2N6331
2N6331 Transistor Silicon PNP CASE: TO3 MAKE: ASI
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer ASI
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 114
Derate (Amb) (W/°C) 1.1
Max. hFE 30
Min hFE 6.0
Ic Max. (A) 30
@Ic (test) (A) 30
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 40 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 6
SKU 116282
Back