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2N6381
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2N6381

SKU: 2N6381
2N6381 Transistor Silicon PNP CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO61
Manufacturer Generic
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 250
Derate (Amb) (W/°C) 1.4
t(f) Max. (S) 250n
Max. hFE 120
Min hFE 30
Ic Max. (A) 50
@Ic (test) (A) 20
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Tr Max. (s) 350n
R(sat) (Û) 60m
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 250 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 1500 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 772232
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