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2N6422
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2N6422

SKU: 2N6422
2N6422 Transistor Silicon PNP CASE: TO66 MAKE: Generic
Datasheet
2N6422 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer MOSPEC Semiconductor
Vbr CBO 500
Vbr CEO 300
Max. PD (W) 35
Derate (Amb) (W/°C) 200m
t(f) Max. (S) 3.0u
Max. hFE 80
Min hFE 8.0
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
Tr Max. (s) 3.0u
R(sat) (Û) 750m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 200
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 366460
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