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2N649
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2N649

SKU: 2N649
2N649 Transistor Germanium NPN CASE: TO1 MAKE: Generic
Product specifications
Type Transistor Germanium NPN
Case TO1
Manufacturer Generic
Vbr CBO 20
Vbr CEO 18
Max. PD (W) 100m
Derate (Amb) (W/°C) 2.0m
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 14u
Polarity NPN
Oper. Temp (°C) Max. 71
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 120 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 772168
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