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2N657S
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2N657S

SKU: 2N657S
2N657S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 4.0
Max. hFE 90
Min hFE 30
Ic Max. (A) 500m
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 25
Derate Above 25°C 22m
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2.8 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 553172
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