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2N663
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2N663

SKU: 2N663
2N663 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 50
Vbr CEO 25
Max. PD (W) 10
Max. hFE 75
Min hFE 25
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 4.0m
Polarity PNP
Tr Max. (s) 10u
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 15k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 772058
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