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2N676
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2N676

SKU: 2N676
2N676 Transistor Germanium PNP CASE: TO3 MAKE: Advanced Research Association
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Advanced Research Association
Min hFE 15k
Mat. Germanium
Polarity PNP
PD Max. (W) 10
@Ic (test) 1.0
Ic Max. 3.0
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 771975
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