The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N751
View detailed images (1)

2N751

SKU: 2N751
2N751 Transistor Silicon NPN CASE: U8 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case U8
Manufacturer Raytheon Semiconductor
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 200m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.3m
hfe 2.2
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 800n
Polarity NPN
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 770779
Back