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2N817
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2N817

SKU: 2N817
2N817 Transistor Germanium NPN CASE: U8 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Germanium NPN
Case U8
Manufacturer Raytheon Semiconductor
Vbr CBO 30
Vbr CEO 15
Max. PD (W) 75m
C(ob) (F) 20p
Derate (Amb) (W/°C) 1.2m
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.075 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 770715
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