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2SA1022
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2SA1022

SKU: 2SA1022
2SA1022 Transistor Silicon PNP CASE: SOT23 MAKE: Matsushita Electronics
Datasheet
2SA1022 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Matsushita Electronics
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 200m
hfe 50
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 10i
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1.2 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 342879
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