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2SA1093
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2SA1093

SKU: 2SA1093
2SA1093 Transistor Silicon PNP CASE: TO218 MAKE: Toshiba
Datasheet
2SA1093 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Toshiba
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 80
Derate (Amb) (W/°C) 640m
Max. hFE 240
Min hFE 55
Ic Max. (A) 8.0
@Ic (test) (A) -1
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 90M
Oper. Temp (°C) Max. 140
@VCE (V) -5
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 150 pF
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 342899
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