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2SA1121
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2SA1121

SKU: 2SA1121
2SA1121 Transistor Silicon PNP CASE: TO236 MAKE: Hitachi
Datasheet
2SA1121 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Hitachi
Vbr CEO 35
Max. PD (W) 150m
hfe 60
Ic Max. (A) 100m
Polarity PNP
@VCE (test) (V) 12
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code SB_SC_SD
SKU 342900
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