| 2SA1122 Datasheet |
| Type | Transistor Silicon PNP | |
| Case | TO236 | |
| Manufacturer | Hitachi | |
| Vbr CEO | 55 | |
| Max. PD (W) | 150m | |
| hfe | 160 | |
| Ic Max. (A) | 100m | |
| Polarity | PNP | |
| @VCE (test) (V) | 12 | |
| @Ic (A) | 2.0m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 0.15 W | |
| Maximum Collector-Base Voltage |Vcb| | 55 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 0.1 A | |
| Max. Operating Junction Temperature (Tj) | 125 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 160 | |
| SMD Transistor Code | CC_CD_CE | |
| SKU | 342901 | |