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2SA1185
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2SA1185

SKU: 2SA1185
2SA1185 Transistor Silicon PNP CASE: TO218 MAKE: Matsushita Electronics
Datasheet
2SA1185 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Matsushita Electronics
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 60
Derate (Amb) (W/°C) 480m
Max. hFE 320
Min hFE 60
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 116331
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