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2SA1308
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2SA1308

SKU: 2SA1308
2SA1308 Transistor Silicon PNP CASE: X104-1 MAKE: Toshiba
Datasheet
2SA1308 Datasheet
Product specifications
Type Transistor Silicon PNP
Case X104-1
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
t(f) Max. (S) 100n-
Max. hFE 240
Min hFE 70
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Tr Max. (s) 200n-
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 342939
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