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2SA1310
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2SA1310

SKU: 2SA1310
2SA1310 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics
Datasheet
2SA1310 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT33
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 55
Max. PD (W) 300m
Derate (Amb) (W/°C) 2.4m
hfe 180
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 80M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 55 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 120 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 342941
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