2SA1327O

SKU: 2SA1327O

2SA1327O Transistor Silicon PNP CASE: SOT186 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	2SA1327
Type	Transistor Silicon PNP
Case	SOT186
Manufacturer	Toshiba
Vbr CBO	50
Vbr CEO	20
Max. PD (W)	2.0
Derate (Amb) (W/°C)	16m
Max. hFE	200
Min hFE	100
Ic Max. (A)	10
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	45M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	11 A
Max. Operating Junction Temperature (Tj)	120 °C
Collector Capacitance (Cc)	400 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	585830

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