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2SA375
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2SA375

SKU: 2SA375
2SA375 Transistor Germanium PNP CASE: TO1 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Mitsubishi
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 80m
C(ob) (F) 2.5p
Derate (Amb) (W/°C) 1.3m
hfe 40
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity PNP
Trans. Freq (Hz) Min. 40.M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 50m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.08 W
Maximum Collector-Base Voltage |Vcb| 34 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 551968
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