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2SA479
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2SA479

SKU: 2SA479
2SA479 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Toshiba
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 125m
C(ob) (F) 3.0p
Derate (Amb) (W/°C) 2.1m
hfe 60
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 8.0u
Polarity PNP
Trans. Freq (Hz) Min. 40.M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 200m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.125 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 584621
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