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2SA516
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2SA516

SKU: 2SA516
2SA516 Transistor Silicon PNP CASE: TO5 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Toshiba
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 800m
C(ob) (F) 43p
Derate (Amb) (W/°C) 5.3m
hfe 60
Ic Max. (A) 15
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 50.M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 175
@Ic (A) 200m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 116427
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