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2SA558
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2SA558

SKU: 2SA558
2SA558 Transistor Silicon PNP CASE: TO18 MAKE: Fujitsu
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Fujitsu
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 350m
Derate (Amb) (W/°C) 2.3m
hfe 50
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 116451
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