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2SA567
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2SA567

SKU: 2SA567
2SA567 Transistor Silicon PNP CASE: TO1 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO1
Manufacturer Hitachi
Vbr CBO 30
Max. PD (W) 200m
hfe 300
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 500n
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 6.0
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SKU 116457
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