The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA605
View detailed images (4)

2SA605

SKU: 2SA605
2SA605 Transistor Silicon PNP CASE: TO18 MAKE: NEC
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer NEC
Vbr CBO 180
Vbr CEO 160
Max. PD (W) 300m
C(ob) (F) 5.0p
Derate (Amb) (W/°C) 2.4m
hfe 50
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 165 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 556247
Back