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2SA66
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2SA66

SKU: 2SA66
2SA66 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Toshiba
Vbr CBO 18
Vbr CEO 18
Max. PD (W) 150m
C(ob) (F) 16p
Derate (Amb) (W/°C) 3.0m
hfe 80
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 12u
Polarity PNP
Trans. Freq (Hz) Min. 7.5M
@VCE (test) (V) .50
Oper. Temp (°C) Max. 75
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 584215
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