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2SA709
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2SA709

SKU: 2SA709
2SA709 Transistor Silicon PNP CASE: X55-1 MAKE: NEC
Product specifications
Type Transistor Silicon PNP
Case X55-1
Manufacturer NEC
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 300m
C(ob) (F) 7.5p
Derate (Amb) (W/°C) 2.4m
t(f) Max. (S) 270n-+
hfe 160
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Tr Max. (s) 100n-
t(stor) Max. (S) 200n-
Trans. Freq (Hz) Min. 280M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 140
@Ic (A) 10m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 768719
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